FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2023264632> ?p ?o ?g. }

• W2023264632 endingPage "04DF07" @default.
• W2023264632 startingPage "04DF07" @default.
• W2023264632 abstract "AlGaN/GaN high electron mobility transistors (HEMTs) were electrically stressed in pinch-off condition at a drain voltage up to 200 V for 200 h at an ambient temperature of 200 °C. The tested transistors which were grown and processed on 4-in. silicon substrate showed negligible degradation. This proves that a combination of a high quality AlGaN/GaN/AlGaN double heterostructure, the in-situ Si 3 N 4 deposition technique and an accurately optimized gate technology result in excellent device stability under harsh conditions." @default.
• W2023264632 created "2016-06-24" @default.
• W2023264632 creator A5001065266 @default.
• W2023264632 creator A5003727842 @default.
• W2023264632 creator A5004465049 @default.
• W2023264632 creator A5016169727 @default.
• W2023264632 creator A5018371100 @default.
• W2023264632 creator A5026851987 @default.
• W2023264632 creator A5037507629 @default.
• W2023264632 creator A5052444057 @default.
• W2023264632 creator A5055325440 @default.
• W2023264632 creator A5056071536 @default.
• W2023264632 creator A5067766836 @default.
• W2023264632 creator A5073348744 @default.
• W2023264632 date "2010-04-01" @default.
• W2023264632 modified "2023-10-02" @default.
• W2023264632 title "Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C" @default.
• W2023264632 cites W1968385099 @default.
• W2023264632 cites W1997717448 @default.
• W2023264632 cites W1999811822 @default.
• W2023264632 cites W2012295979 @default.
• W2023264632 cites W2041804797 @default.
• W2023264632 cites W2049275801 @default.
• W2023264632 cites W2054773891 @default.
• W2023264632 cites W2063360458 @default.
• W2023264632 cites W2069960516 @default.
• W2023264632 cites W2090925905 @default.
• W2023264632 cites W2093302013 @default.
• W2023264632 cites W2106755750 @default.
• W2023264632 cites W2132349425 @default.
• W2023264632 cites W2137778525 @default.
• W2023264632 cites W2148535911 @default.
• W2023264632 cites W2159374748 @default.
• W2023264632 cites W2160833768 @default.
• W2023264632 cites W2161751664 @default.
• W2023264632 doi "https://doi.org/10.1143/jjap.49.04df07" @default.
• W2023264632 hasPublicationYear "2010" @default.
• W2023264632 type Work @default.
• W2023264632 sameAs 2023264632 @default.
• W2023264632 citedByCount "13" @default.
• W2023264632 countsByYear W20232646322012 @default.
• W2023264632 countsByYear W20232646322013 @default.
• W2023264632 countsByYear W20232646322016 @default.
• W2023264632 countsByYear W20232646322018 @default.
• W2023264632 countsByYear W20232646322019 @default.
• W2023264632 crossrefType "journal-article" @default.
• W2023264632 hasAuthorship W2023264632A5001065266 @default.
• W2023264632 hasAuthorship W2023264632A5003727842 @default.
• W2023264632 hasAuthorship W2023264632A5004465049 @default.
• W2023264632 hasAuthorship W2023264632A5016169727 @default.
• W2023264632 hasAuthorship W2023264632A5018371100 @default.
• W2023264632 hasAuthorship W2023264632A5026851987 @default.
• W2023264632 hasAuthorship W2023264632A5037507629 @default.
• W2023264632 hasAuthorship W2023264632A5052444057 @default.
• W2023264632 hasAuthorship W2023264632A5055325440 @default.
• W2023264632 hasAuthorship W2023264632A5056071536 @default.
• W2023264632 hasAuthorship W2023264632A5067766836 @default.
• W2023264632 hasAuthorship W2023264632A5073348744 @default.
• W2023264632 hasConcept C106782819 @default.
• W2023264632 hasConcept C111368507 @default.
• W2023264632 hasConcept C119599485 @default.
• W2023264632 hasConcept C127313418 @default.
• W2023264632 hasConcept C127413603 @default.
• W2023264632 hasConcept C162057924 @default.
• W2023264632 hasConcept C165801399 @default.
• W2023264632 hasConcept C172385210 @default.
• W2023264632 hasConcept C192562407 @default.
• W2023264632 hasConcept C195370968 @default.
• W2023264632 hasConcept C2777289219 @default.
• W2023264632 hasConcept C2779679103 @default.
• W2023264632 hasConcept C49040817 @default.
• W2023264632 hasConcept C544956773 @default.
• W2023264632 hasConcept C79794668 @default.
• W2023264632 hasConceptScore W2023264632C106782819 @default.
• W2023264632 hasConceptScore W2023264632C111368507 @default.
• W2023264632 hasConceptScore W2023264632C119599485 @default.
• W2023264632 hasConceptScore W2023264632C127313418 @default.
• W2023264632 hasConceptScore W2023264632C127413603 @default.
• W2023264632 hasConceptScore W2023264632C162057924 @default.
• W2023264632 hasConceptScore W2023264632C165801399 @default.
• W2023264632 hasConceptScore W2023264632C172385210 @default.
• W2023264632 hasConceptScore W2023264632C192562407 @default.
• W2023264632 hasConceptScore W2023264632C195370968 @default.
• W2023264632 hasConceptScore W2023264632C2777289219 @default.
• W2023264632 hasConceptScore W2023264632C2779679103 @default.
• W2023264632 hasConceptScore W2023264632C49040817 @default.
• W2023264632 hasConceptScore W2023264632C544956773 @default.
• W2023264632 hasConceptScore W2023264632C79794668 @default.
• W2023264632 hasIssue "4S" @default.
• W2023264632 hasLocation W20232646321 @default.
• W2023264632 hasOpenAccess W2023264632 @default.
• W2023264632 hasPrimaryLocation W20232646321 @default.
• W2023264632 hasRelatedWork W1643924019 @default.
• W2023264632 hasRelatedWork W1972855905 @default.
• W2023264632 hasRelatedWork W1983914478 @default.
• W2023264632 hasRelatedWork W2093324122 @default.
• W2023264632 hasRelatedWork W2260295233 @default.
• W2023264632 hasRelatedWork W2495209789 @default.

• next