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- W2023266040 abstract "One kW average power (13 J multiplied by 80 Hz or 10 J multiplied by 100 Hz) has been obtained in 1992 and up to 22 J per pulse and per module has been reached in 1995 in the frame of Eureka Programm EU205 by SOPRA. This work is the prolongation of these studies and gives to the flat panel industry a unique tool in the world for silicon annealing. Gathering three modules, we obtain 60 J per pulse at 308 nm. The first module is an oscillator; the two others work as amplifiers. We tested different kinds of cavity (stable and unstable); finally, we choose an unstable cavity (M equals 1.2) with special output mirror. The pulse duration is about 200 ns FWHM but can be tuned if necessary. The flat panel industry asks a repetition rate of 0.16 Hz, so there is no need for circulation of the gas mixture. Work on synchronization of the 3 modules is shown. Main applications of these lasers are shock hardening, soft x-rays generation, surface treatment by photo-ablation and 'single shot excimer laser annealing' (SSELA). For the first ones, the laser beam has to have a low divergence and for surface treatment, the beam must be very homogeneous (typically plus or minus 3%). That is the reason why we designed a homogenizer and we solved problems of self focusing and plasma creation. The 3 modules and the process in cleanroom are driven by a control command system for an industrial use." @default.
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- W2023266040 date "1997-04-04" @default.
- W2023266040 modified "2023-09-23" @default.
- W2023266040 title "60J XeCl laser for single-shot excimer laser annealing" @default.
- W2023266040 doi "https://doi.org/10.1117/12.270206" @default.
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