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- W2023266570 abstract "The buffer layers of tin compound semiconductor were deposited on the Cu(In, Ga)Se <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> (CIGS) substrates by chemical bath deposition. Sn(O, S) <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films were grown in an alkaline ammonia solution by reaction of tin(IV) chloride with thiourea at the bath temperature of 70 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>o</sup> C. The smooth and conformal coverage films were achieved on the CIGS substrates with thickness of 20nm. The morphological and chemical properties were evaluated using scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). On the other hand, layer thickness of 90nm could be grown in an acidic solution with sodium sulfide (Na <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> S) within 60min. When we applied the Sn compound thin films as the alternative buffers in thin film CIGS solar cells, the efficiency of 9.4% small area cells were achieved. This result provided the potential for the Sn(O, S) <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films to be used as buffer or window layers in solar cell devices." @default.
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- W2023266570 date "2013-06-01" @default.
- W2023266570 modified "2023-09-25" @default.
- W2023266570 title "Sn(O, S)<inf>2</inf> thin films by chemical bath deposition for Cd-free CIGS thin film solar cells" @default.
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- W2023266570 doi "https://doi.org/10.1109/pvsc.2013.6744339" @default.
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