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• W2023268197 endingPage "2457" @default.
• W2023268197 startingPage "2454" @default.
• W2023268197 abstract "Uniaxially strained SiGe layers were fabricated with a newly developed selective-ion-implantation technique. The SiGe layer was grown on the Si substrate, into which laterally selective ion-implantation with stripe pattern was carried out prior to the SiGe growth. A strain-relaxation of the SiGe layer was largely enhanced due to ion-implantation-induced defects selectively in the ion-implanted area while it was hardly enhanced in the neighboring unimplanted area. However, micro-Raman mapping and X-ray diffraction reciprocal space mapping measurements obviously revealed that the relaxed SiGe in the implanted area remarkably influenced a strain state of the neighboring strained SiGe in the unimplanted area, that is, the strain along the stripe line direction was highly relieved due to the stress caused by the neighboring relaxed SiGe while the strain in the direction perpendicular to the line was well maintained. As a result, highly asymmetric strain state, that is, uniaxial strain was realized, where 4 times different relaxation ratios in the two directions were observed. These results indicate that the selective-ion-implantation technique developed in this study has a high potential to realize uniaxially strained Si/Ge channel devices with high mobility." @default.
• W2023268197 created "2016-06-24" @default.
• W2023268197 creator A5002193728 @default.
• W2023268197 creator A5020769673 @default.
• W2023268197 creator A5021331933 @default.
• W2023268197 creator A5026366957 @default.
• W2023268197 creator A5039343762 @default.
• W2023268197 creator A5056708217 @default.
• W2023268197 creator A5082258905 @default.
• W2023268197 creator A5083288371 @default.
• W2023268197 date "2010-02-01" @default.
• W2023268197 modified "2023-10-16" @default.
• W2023268197 title "Formation of uniaxially strained SiGe by selective ion implantation technique" @default.
• W2023268197 cites W1970621169 @default.
• W2023268197 cites W1986533615 @default.
• W2023268197 cites W1998955518 @default.
• W2023268197 cites W2021001288 @default.
• W2023268197 cites W2032611807 @default.
• W2023268197 cites W2037756459 @default.
• W2023268197 cites W2038167290 @default.
• W2023268197 cites W2078315702 @default.
• W2023268197 cites W2087350651 @default.
• W2023268197 cites W2106028416 @default.
• W2023268197 cites W2109523569 @default.
• W2023268197 cites W2124340473 @default.
• W2023268197 doi "https://doi.org/10.1016/j.tsf.2009.09.157" @default.
• W2023268197 hasPublicationYear "2010" @default.
• W2023268197 type Work @default.
• W2023268197 sameAs 2023268197 @default.
• W2023268197 citedByCount "2" @default.
• W2023268197 countsByYear W20232681972017 @default.
• W2023268197 crossrefType "journal-article" @default.
• W2023268197 hasAuthorship W2023268197A5002193728 @default.
• W2023268197 hasAuthorship W2023268197A5020769673 @default.
• W2023268197 hasAuthorship W2023268197A5021331933 @default.
• W2023268197 hasAuthorship W2023268197A5026366957 @default.
• W2023268197 hasAuthorship W2023268197A5039343762 @default.
• W2023268197 hasAuthorship W2023268197A5056708217 @default.
• W2023268197 hasAuthorship W2023268197A5082258905 @default.
• W2023268197 hasAuthorship W2023268197A5083288371 @default.
• W2023268197 hasConcept C116642361 @default.
• W2023268197 hasConcept C120665830 @default.
• W2023268197 hasConcept C121332964 @default.
• W2023268197 hasConcept C126322002 @default.
• W2023268197 hasConcept C145148216 @default.
• W2023268197 hasConcept C149912024 @default.
• W2023268197 hasConcept C15744967 @default.
• W2023268197 hasConcept C159985019 @default.
• W2023268197 hasConcept C171250308 @default.
• W2023268197 hasConcept C178790620 @default.
• W2023268197 hasConcept C185592680 @default.
• W2023268197 hasConcept C192562407 @default.
• W2023268197 hasConcept C199631012 @default.
• W2023268197 hasConcept C202974441 @default.
• W2023268197 hasConcept C2524010 @default.
• W2023268197 hasConcept C2776029896 @default.
• W2023268197 hasConcept C2778022156 @default.
• W2023268197 hasConcept C2779227376 @default.
• W2023268197 hasConcept C33923547 @default.
• W2023268197 hasConcept C40003534 @default.
• W2023268197 hasConcept C41823505 @default.
• W2023268197 hasConcept C49040817 @default.
• W2023268197 hasConcept C71924100 @default.
• W2023268197 hasConcept C77805123 @default.
• W2023268197 hasConceptScore W2023268197C116642361 @default.
• W2023268197 hasConceptScore W2023268197C120665830 @default.
• W2023268197 hasConceptScore W2023268197C121332964 @default.
• W2023268197 hasConceptScore W2023268197C126322002 @default.
• W2023268197 hasConceptScore W2023268197C145148216 @default.
• W2023268197 hasConceptScore W2023268197C149912024 @default.
• W2023268197 hasConceptScore W2023268197C15744967 @default.
• W2023268197 hasConceptScore W2023268197C159985019 @default.
• W2023268197 hasConceptScore W2023268197C171250308 @default.
• W2023268197 hasConceptScore W2023268197C178790620 @default.
• W2023268197 hasConceptScore W2023268197C185592680 @default.
• W2023268197 hasConceptScore W2023268197C192562407 @default.
• W2023268197 hasConceptScore W2023268197C199631012 @default.
• W2023268197 hasConceptScore W2023268197C202974441 @default.
• W2023268197 hasConceptScore W2023268197C2524010 @default.
• W2023268197 hasConceptScore W2023268197C2776029896 @default.
• W2023268197 hasConceptScore W2023268197C2778022156 @default.
• W2023268197 hasConceptScore W2023268197C2779227376 @default.
• W2023268197 hasConceptScore W2023268197C33923547 @default.
• W2023268197 hasConceptScore W2023268197C40003534 @default.
• W2023268197 hasConceptScore W2023268197C41823505 @default.
• W2023268197 hasConceptScore W2023268197C49040817 @default.
• W2023268197 hasConceptScore W2023268197C71924100 @default.
• W2023268197 hasConceptScore W2023268197C77805123 @default.
• W2023268197 hasFunder F4320320912 @default.
• W2023268197 hasFunder F4320321034 @default.
• W2023268197 hasIssue "9" @default.
• W2023268197 hasLocation W20232681971 @default.
• W2023268197 hasOpenAccess W2023268197 @default.
• W2023268197 hasPrimaryLocation W20232681971 @default.
• W2023268197 hasRelatedWork W1965765634 @default.
• W2023268197 hasRelatedWork W1993158183 @default.
• W2023268197 hasRelatedWork W2016584571 @default.
• W2023268197 hasRelatedWork W2019993466 @default.

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