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- W2023268889 abstract "Cross-sectional transmission electron microscope (TEM) observation has been performed for GaN grown simultaneously on (111)A and (111)B of a GaAs substrate by metalorganic hydrogen chloride vapor-phase epitaxy. A low-temperature (LT) buffer layer of GaN about 85 nm thick was deposited at 550°C, and then a thick layer of GaN (HT-GaN) was grown at 920°C. On GaAs(111)A, the LT-buffer layer has a fine columnar structure and its stacking order is of 2H (wurtzite) or a mixture of 2H and 3C (zincblende). On the LT-layer, the HT-GaN was grown in the wurtzite structure with Ga-polarity. In the HT-GaN, a columnar structure is formed on the interface of GaN/LT-GaN, and a good quality GaN is grown in the upper region. These characteristics in microstructure are very similar to those in GaN grown on α-Al 2 O 3 by the conventional two-step growth method. On GaAs(111)B, the LT-buffer layer has a disordered stacking sequence. A block structure is formed on the interface of GaN/LT-GaN, and the HT-GaN has a fairly good quality. The HT-GaN has Ga-polarity in spite of the fact that the substrate has As-polarity." @default.
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- W2023268889 date "2001-12-01" @default.
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- W2023268889 title "Transmission Electron Microscope Analysis of Microstructures in GaN Grown on (111)A and (111)B of GaAs by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy" @default.
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- W2023268889 doi "https://doi.org/10.1002/1521-396x(200112)188:2<557::aid-pssa557>3.0.co;2-#" @default.
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