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- W2023279937 abstract "Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes." @default.
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- W2023279937 date "2009-10-01" @default.
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- W2023279937 title "Dislocation Engineering in Multicrystalline Silicon" @default.
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- W2023279937 doi "https://doi.org/10.4028/www.scientific.net/ssp.156-158.11" @default.
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