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• W2023285899 abstract "The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UHVCVD) SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si (001) substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dislocation density." @default.
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• W2023285899 date "2007-12-01" @default.
• W2023285899 modified "2023-09-23" @default.
• W2023285899 title "Growth of Ge layer on relaxed Ge-rich SiGe by ultrahigh vacuum chemical vapor deposition" @default.
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• W2023285899 doi "https://doi.org/10.1016/s1007-0214(07)70184-0" @default.
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