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• W2023286959 startingPage "L693" @default.
• W2023286959 abstract "We have successfully deposited nanocrystalline cubic silicon carbide (nc-3C-SiC:H) films at a low substrate temperature of 360 °C by very high-frequency plasma-enhanced chemical vapor deposition using monomethylsilane and hydrogen. Spectroscopic ellipsometry revealed that the crystalline volume fraction of the films increased from 69 to 92% with increasing hydrogen dilution ratio from 100 to 500. We found that the dark conductivity of the films was strongly affected by the crystalline volume fraction. A high deposition rate of 0.15 nm/s was achieved under a low hydrogen dilution ratio of 100." @default.
• W2023286959 created "2016-06-24" @default.
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• W2023286959 date "2007-07-13" @default.
• W2023286959 modified "2023-09-25" @default.
• W2023286959 title "Effects of Hydrogen Dilution Ratio on Properties of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition" @default.
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• W2023286959 doi "https://doi.org/10.1143/jjap.46.l693" @default.
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