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- W2023287881 abstract "Abstract High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH 3 and N 2 :H 2 at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH 3 , which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga 2 O 3 NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O 2 under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H 2 dissociates on the Au nanoparticles and reacts with Ga giving Ga x H y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH 3 near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga 2 O 3 NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation." @default.
- W2023287881 created "2016-06-24" @default.
- W2023287881 creator A5015784029 @default.
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- W2023287881 date "2010-09-01" @default.
- W2023287881 modified "2023-09-25" @default.
- W2023287881 title "Hydride-assisted growth of GaN nanowires on Au/Si(001) via the reaction of Ga with NH3 and H2" @default.
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- W2023287881 doi "https://doi.org/10.1016/j.jcrysgro.2010.05.040" @default.
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