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- W2023302301 abstract "The dependence of shallow donors and DX centers on Si doping concentration in Al x Ga 1- x As layers grown by MBE has been investigated. In the shallow-to-DX transition region around x =0.2, the concentration ratio of DX centers to shallow donors was proved to have strong dependence on Si doping concentration. While few DX centers were observed in the samples with an Si concentration of about 1×10 17 cm -3 DX centers became dominant above 1×10 18 cm -3 . These results can be explained by the effect of electron distribution between Γ-valley and DX center level." @default.
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- W2023302301 date "1986-06-01" @default.
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- W2023302301 title "Formation of DX Centers by Heavy Si Doping in MBE-Grown Al<sub>x</sub>Ga<sub>1-x</sub>As with Low Al Content" @default.
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- W2023302301 doi "https://doi.org/10.1143/jjap.25.l484" @default.
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