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- W2023341782 abstract "Successful annealing of p+n diode arrays fabricated by ion implantation of 11B (50 keV, 1×1014 cm−2) into Si (100) has been performed using a broadly rastered, low-resolution (0.25 in. diameter) electron beam. A complete 2 in. wafer could be uniformly annealed in ≃20 sec with electrical activation ≃75% and small dopant redistribution (∼450 Å). Annealing resulted in p+n junctions characterized by low reverse current (?4 nA/cm2 at 5-V reverse bias) and high carrier lifetime (≳80 μsec) over the entire 2 in. wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to successfully reorder the substrate and remove ion implantation damage near the p+n junction." @default.
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- W2023341782 date "1981-02-01" @default.
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- W2023341782 title "Scanned electron beam annealing of boron-implanted diodes" @default.
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- W2023341782 doi "https://doi.org/10.1063/1.92287" @default.
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