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• W2023350500 abstract "In this study, we fabricated Eu-substituted SrFeO2 (Sr1-xEuxFeO2; Eu:SrFeO2) epitaxial thin films with an infinite-layer structure via solid-phase reduction of Sr1-xEuxFeO3-δ precursor films grown by pulsed laser deposition. The Eu:SrFeO2 (x = 0.10) film showed resistivity as low as ∼0.15 Ω cm at room temperature, which is approximately four orders of magnitude lower than that of undoped SrFeO2. Hall measurements confirmed that n-type (electron) carriers were responsible for the semiconductor-like electric conduction in Eu:SrFeO2. We also observed a large negative magnetoresistance of 78% at 2 K in the Eu:SrFeO2 (x = 0.10) film." @default.
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• W2023350500 date "2010-12-16" @default.
• W2023350500 modified "2023-10-18" @default.
• W2023350500 title "Carrier Doping into SrFeO₂Epitaxial Thin Films by Eu-Substitution" @default.
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• W2023350500 doi "https://doi.org/10.1143/apex.4.013001" @default.
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