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• W2023353733 endingPage "41" @default.
• W2023353733 startingPage "1" @default.
• W2023353733 abstract "The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current becomes too large. This led to the replacement of SiO2 by a physically thicker layer of a higher dielectric constant or ‘high-K’ oxide such as hafnium oxide. Intensive research was carried out to develop these oxides into high quality electronic materials. In addition, the incorporation of Ge in the CMOS transistor structure has been employed to enable higher carrier mobility and performance. This review covers both scientific and technological issues related to the high-K gate stack – the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging to achieve the thinnest oxide thicknesses. The high K oxides were implemented in conjunction with a replacement of polycrystalline Si gate electrodes with metal gates. The strong metallurgical interactions between the gate electrodes and the HfO2 which resulted an unstable gate threshold voltage resulted in the use of the lower temperature ‘gate last’ process flow, in addition to the standard ‘gate first’ approach. Work function control by metal gate electrodes and by oxide dipole layers is discussed. The problems associated with high K oxides on Ge channels are also discussed." @default.
• W2023353733 created "2016-06-24" @default.
• W2023353733 creator A5056592766 @default.
• W2023353733 creator A5081690749 @default.
• W2023353733 date "2015-02-01" @default.
• W2023353733 modified "2023-10-14" @default.
• W2023353733 title "High-K materials and metal gates for CMOS applications" @default.
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