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- W2023356181 abstract "A lithographic method using focused ion beam exposure and subsequent dry etching is examined. The lithographic mechanism is also investigated. Employing resist patterns formed by this method, an x-ray mask is prepared. It is shown that Ga ion exposed regions of polymer resists act as an in situ mask during the O2 reactive ion etching dry development of unexposed regions. Gallium distribution and its chemical shift in a resist after exposure or development are measured by XPS. The surface gallium atoms of resist exposed to oxygen plasma are changed to Ga2O3, which covers the resist surface and acts as in situ masks against the oxygen plasma. The feasibility of the lithographic method is demonstrated by a preparation of submicron pattern x-ray masks." @default.
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- W2023356181 title "Resist patterning and x-ray mask fabrication employing focused ion beam exposure and subsequent dry etching" @default.
- W2023356181 doi "https://doi.org/10.1116/1.582993" @default.
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