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• W2023374576 abstract "Magnetron sputtering has been used to deposit Ni‐rich nickel oxide thin films. Based on the switching of lateral current conduction in the nickel oxide thin film between two in‐plane electrodes, a planar write‐once‐read‐many‐times memory device has been demonstrated. The switching from a low‐conductance state (i.e., the OFF state) to a high‐conductance state (i.e., the ON state) is induced by a writing voltage, and it is irreversible due to the formation of tilted conductive filaments that are hard to be dissolved by the Joule heating effect. For 80 devices under test, the writing voltage is in a narrow range of 2.0−3.5 V and the ON/OFF resistance ratio is larger than 10 5 at the reading voltage of 0.3 V. An excellent reading endurance (10 6 readings) for both ON and OFF states is demonstrated. The device is promising in low‐power applications as it can operate at ultra‐low voltages (e.g., the reading voltage can be below 100 mV)." @default.
• W2023374576 created "2016-06-24" @default.
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• W2023374576 date "2013-04-11" @default.
• W2023374576 modified "2023-10-05" @default.
• W2023374576 title "Lateral Conduction Switching in Sputtered Ni‐rich NiO Thin Films for Write‐Once‐Read‐Many‐Times Memory Applications" @default.
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• W2023374576 doi "https://doi.org/10.1111/ijac.12098" @default.
• W2023374576 hasPublicationYear "2013" @default.
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