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• W2023379519 endingPage "2900" @default.
• W2023379519 startingPage "2896" @default.
• W2023379519 abstract "The growth selectivity on patterned GaAs (311)A substrates differs qualitatively from that on low-index (100) and (111) substrates. During molecular beam epitaxy of (Al,Ga)As, [01-1] oriented mesa stripes develop a fast growing convex sidewall. A continuous transition occurs towards the slow growing concave sidewall upon turning the mesa along the perpendicular [-233] direction without breaking up the growth front into microfacets. This allows their systematic combination at the corner or edge of intersecting mesa stripes appropriately inclined from [01-1] among which we highlight those involving fast growing sidewalls. The scenario, which is unique for patterned GaAs (311)A substrates, offers a novel degree of flexibility for the design of lateral functional semiconductor nanostructures." @default.
• W2023379519 created "2016-06-24" @default.
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• W2023379519 date "1999-09-01" @default.
• W2023379519 modified "2023-09-24" @default.
• W2023379519 title "Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures" @default.
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• W2023379519 doi "https://doi.org/10.1063/1.371138" @default.
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