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- W2023379537 abstract "Zinc oxide (ZnO) thin films have been deposited using a SILAR (Successive Ionic Layer Adsorption and Reaction) technique, which is based on the alternate dipping of substrate in the solution and distilled water. The thin films were grown on copper, silicon and glass substrates. The precursors for ZnO films were diluted aqueous solution ZnSO4 complexed with NH3. The films were investigated by X-ray diffraction, scanning electron microscopy, XPS spectroscopy and spectrophotometer. XRD measurement showed that the films were crystallized in the wurtzite phase type with preferred orientation (002). X-ray photoelectron spectroscopy (XPS) was used to monitor changes in oxidation state of ZnO thin films. The XPS peaks of the O1s, Zn2p3/2 and Zn2p1/2 were used for studding the ZnO film. The results of influence of different parameters of SILAR method on phase structure, surface morphology, and optical properties are studied and discussed." @default.
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- W2023379537 date "2014-01-01" @default.
- W2023379537 modified "2023-09-27" @default.
- W2023379537 title "Characterization of ZnO Thin Films Grown by SILAR Method" @default.
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- W2023379537 doi "https://doi.org/10.4236/oalib.1100588" @default.
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