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• W2023403995 abstract "The authors demonstrate a low-cost, high-performance, high-voltage complementary SiGe:C BiCMOS process. This technology offers three npn SiGe:C devices with fT/BVCEO values of 40GHz/5V, 63GHz/3.5V, and 120GHz/2.1V together with a 32GHz fT/35GHz f max/ 4.4V pnp SiGe:C HBT by adding only three bipolar masks to the underlying RF-CMOS process. With two additional implant masks, a 150GHz, 2.2V npn HBT and either a 43GHz fT/ 65GHz fmax 4.2V pnp or a 38GHz fT/ 70GHz fmax, 5.8V pnp device can be fabricated additionally (in the npn case) or alternatively (pnp case) to the devices of the 3-mask module" @default.
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• W2023403995 date "2006-01-01" @default.
• W2023403995 modified "2023-09-24" @default.
• W2023403995 title "A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process" @default.
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• W2023403995 doi "https://doi.org/10.1109/iedm.2006.346856" @default.
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