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• W2023404814 abstract "Stability of amorphous InAlZnO thin-film transistors was investigated under vacuum conditions and an oxygen atmosphere with different rates of relative humidity. The mechanism of water assisted oxygen absorption on the back channel is proposed to explain the phenomenon that wet oxygen leads to a larger positive threshold voltage (Vth) shift than dry oxygen." @default.
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• W2023404814 date "2014-01-01" @default.
• W2023404814 modified "2023-09-24" @default.
• W2023404814 title "Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors" @default.
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• W2023404814 doi "https://doi.org/10.1039/c3ra44513e" @default.
• W2023404814 hasPublicationYear "2014" @default.
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