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- W2023406674 abstract "Static J–V, σ–J, γ–J characteristics based on numerical 1D simulation for Me–n–n+ and Me–n structures are given. The forward voltage drop of the former structure is less then the last one under high level injection because of LH (nn+) junction reflecting properties with respect to minority carriers. Holes stimulate base conductivity modulation but, in spite of this, the hole current gives a negligible contribution to the total current. It is shown that the injection ratio is a less significant parameter compared to base conductivity modulation if it is necessary to estimate charge storage. Influence of substrate is investigated. In addition to forming an LH barrier, the substrate acts as a source of majority carriers and defines the forward voltage drop across the diode structure. Bandgap narrowing in the substrate is taken into account. A comparison with experimental results is also given." @default.
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- W2023406674 date "1999-09-01" @default.
- W2023406674 modified "2023-10-15" @default.
- W2023406674 title "Static characteristics of high-barrier Schottky diode under high injection level" @default.
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- W2023406674 doi "https://doi.org/10.1016/s0038-1101(99)00138-0" @default.
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