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- W2023407720 abstract "Lanthanum erbium oxide thin films have been deposited on an Si (1 0 0) wafer by using the pulsed laser deposition technique. The thermal and electrical properties of LaErO3 films were investigated by x-ray diffraction, x-ray photoelectron spectroscopy and high resolution transmission electron microscopy. Capacitance measurements reveal good C–V curves with an equivalent oxide thickness of 1.4 nm and little hysteresis. Transmission electron microscopic images reveal that the 6.5 nm LaErO3 film shows a thin interfacial layer even after being annealed in N2 at 700 °C for 30 s. X-ray photoelectron spectroscopic spectra indicate that little SiO2 was formed at the interface during the deposition of LaErO3 films. The measured thermal and electrical properties of the thin film suggest that the LaErO3 film should be a promising candidate for future high-k gate dielectrics." @default.
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- W2023407720 date "2008-11-13" @default.
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- W2023407720 title "The thermal stability and electrical properties of LaErO<sub>3</sub>films as high-<i>k</i>gate dielectrics" @default.
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- W2023407720 doi "https://doi.org/10.1088/0022-3727/41/23/235105" @default.
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