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- W2023408143 abstract "Resistive switching characteristics of the double layer (NiO/SiO2) were studied for possible nonvolatile memory applications. The effect of SiO2 thickness variation in the memory device was investigated. A repeatable resistance switching behavior was observed with on/off ratio 105. The operation voltage of the device depended on the thickness of SiO2 layer and it increases with increasing SiO2 thickness. High-resolution transmission electron microscopy analyses revealed that the formation/rapture of Ni filament like percolation path inside SiO2 layer is responsible for the current transport mechanism." @default.
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- W2023408143 date "2009-08-10" @default.
- W2023408143 modified "2023-10-16" @default.
- W2023408143 title "Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications" @default.
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