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• W2023409111 abstract "Taking advantages of broad tunability of carrier density in electric-double-layer transistors (EDLTs) with ionic-liquid gating, we demonstrate evidence of parallel conduction from both p-type bulk and n-type surface in Mg-doped InN EDLTs by comparing their transport properties, especially Hall effect, with those in non-doped InN. Large anomalous oscillation in Hall coefficients with decreasing gate bias was observed in Mg-doped samples, which can be well simulated by two-carrier model. Our results provide the proof for the p-type bulk conduction in Mg-doped InN by showing its prominent effects on electrical transport." @default.
• W2023409111 created "2016-06-24" @default.
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• W2023409111 date "2013-12-16" @default.
• W2023409111 modified "2023-09-30" @default.
• W2023409111 title "Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films" @default.
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• W2023409111 doi "https://doi.org/10.1063/1.4852175" @default.
• W2023409111 hasPublicationYear "2013" @default.
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