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- W2023409652 abstract "We model dislocation generation in InP/Si in the cooling stage, from growth temperature to room temperature, under the inherent thermal stress in heteroepitaxy. The calculations are based on simplified models of dislocation reactions; i.e., the generation of dislocations when the thermal stress exceeds the critical stress for dislocation formation, the stress relaxation resulting from the dislocation formation and from the movement of dislocations, and the annihilation of dislocations by the coalescence of two dislocations and by sweeping out to the edge of the wafer. The results show that the dislocation density at room temperature depends on the cooling rate. For high cooling rates, which are normally used for sample cooling, the dislocation density shows a small dependence on cooling rate, and its value is in good agreement with that obtained experimentally. On the contrary, for low cooling rates, the dislocation density shows a strong dependence on the cooling rate. This means that high-quality and low-dislocation-density InP/Si heterowafers can be obtained by reducing the cooling rate." @default.
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- W2023409652 title "Reduction of dislocation generation for heteroepitaxial III-V/Si by slow cooling" @default.
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