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- W2023437510 abstract "Persistent spectral hole burning (PSHB) in the ${}^{7}{F}_{0}{ensuremath{-}}^{5}{D}_{0}$ transition and the electron excitation in the ${}^{7}{F}_{0}ensuremath{-}4f5d$ transition of ${mathrm{Sm}}^{2+}$ doped in ${mathrm{Al}}_{2}{mathrm{O}}_{3}{ensuremath{-}mathrm{S}mathrm{i}mathrm{O}}_{2}$ glasses were studied from the measurements of hole burning efficiency and the refilling of the burnt hole. The PSHB at low temperature is attributed to the optically activated rearrangement of OH bonds surrounding ${mathrm{Sm}}^{2+}$ ions. On the other hand, the PSHB at high temperature is attributed to one-step electron tunneling in the excitation state. The barrier heights for hole filling corresponding to the two mechanisms were determined to be ensuremath{sim}0.27 and ensuremath{sim}0.90 eV, respectively. Thermal depth of the trap that captures electrons by two-step ionization via the $4f5d$ state was determined to be ensuremath{sim}0.35 eV below the conduction band. A model was proposed for describing the PSHB and electron excitation of ${mathrm{Sm}}^{2+}$ doped in ${mathrm{Al}}_{2}{mathrm{O}}_{3}{ensuremath{-}mathrm{S}mathrm{i}mathrm{O}}_{2}$ glasses. In addition, the dependence of hole burning efficiency on the ${mathrm{Al}}_{2}{mathrm{O}}_{3}$ concentration, temperature, and burning wavelength was also studied." @default.
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- W2023437510 title "Spectral hole burning quantum efficiency and electron traps in<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant=normal>Sm</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>-ion-doped aluminosilicate glasses" @default.
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- W2023437510 doi "https://doi.org/10.1103/physrevb.59.11760" @default.
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