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• W2023441777 abstract "Cupric (CuO) and cuprous (Cu2O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O2 ratio from 2:1 to 12:1. With an Ar:O2 ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu2O and Cu2O + Cu mixed thin films. As Ar:O2 ratio reaches 12:1, Cu2O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal–semiconductor–metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs." @default.
• W2023441777 created "2016-06-24" @default.
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• W2023441777 date "2015-08-01" @default.
• W2023441777 modified "2023-10-16" @default.
• W2023441777 title "Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal–semiconductor–metal Schottky photodiodes" @default.
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• W2023441777 doi "https://doi.org/10.1016/j.apsusc.2015.03.185" @default.
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