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• W2023447101 endingPage "060204" @default.
• W2023447101 startingPage "060204" @default.
• W2023447101 abstract "This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In2O3) TFTs prepared using different annealing temperatures. Even though the a-In2O3 TFTs were annealed at 200 °C, electrical characteristics of aqueous solution-processed a-In2O3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm2 V-1 s-1 and an on/off current ratio of over 106 was exhibited by a-In2O3 TFTs annealed at 250 °C." @default.
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• W2023447101 date "2013-06-01" @default.
• W2023447101 modified "2023-09-27" @default.
• W2023447101 title "High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature" @default.
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• W2023447101 doi "https://doi.org/10.7567/jjap.52.060204" @default.
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