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- W2023453359 abstract "Static induction transistor (SIT) has been demonstrated experimentally to achieve high power, high frequency and high current, high speed and high efficiency devices for analogue and switching applications. Low energy, high speed and high packing density integrated circuits are also possible. Fundamental superiorities of SIT compared with conventional FET and bipolar transistor are discussed in this manuscript to describe performances of junction gate SIT and MIS SIT. Discussions are concentrated on the role of the negative feedback action due to the series resistance, the minority carrier storage effect and the feedback mechanism due to the virtual base resistance." @default.
- W2023453359 created "2016-06-24" @default.
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- W2023453359 date "1980-01-01" @default.
- W2023453359 modified "2023-10-10" @default.
- W2023453359 title "(Invited) Recent Progress and Potential of SIT" @default.
- W2023453359 doi "https://doi.org/10.7567/jjaps.19s1.3" @default.
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