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- W2023462214 endingPage "71" @default.
- W2023462214 startingPage "49" @default.
- W2023462214 abstract "The experiments are analyzed which yield information about the density of localized gap states gl(E) in amorphous semiconductors. A conflict is found between optical absorption data which reveal only a very small gl(E) and electrical measurements, which predict orders of magnitude larger gl(E). A model proposed resolves this conflict by assuming that because of spatial potential fluctuations electrons and holes are trapped in different regions and that near the mobility edge the extended electron wavefunctions are somewhat excluded from regions in which electrons are localized. The consequences of this model regarding the interpretation of the optical and the electrical gap are discussed." @default.
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- W2023462214 date "1971-06-01" @default.
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- W2023462214 title "Optical and electrical energy gaps in amorphous semiconductors" @default.
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- W2023462214 doi "https://doi.org/10.1016/0022-3093(71)90015-9" @default.
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