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• W2023472015 endingPage "1626" @default.
• W2023472015 startingPage "1626" @default.
• W2023472015 abstract "We investigate the synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular beam epitaxy (MBE). For metal-stable growth, unexpectedly strong In surface segregation is revealed. The In depth profiles obtained by secondary ion-mass spectrometry exhibit a top-hat In distribution and are thus indicative of a zeroth order segregation mechanism instead of a first order process as observed for other materials systems. As additionally evidenced by transmission electron microscopy, the segregation of In during metal-stable growth results in quantum wells with smooth interfaces but significantly larger width than intended. The resulting blueshift of the transition energy may be the reason for the frequent conclusion that the theoretical polarization fields of Bernardini et al. [Phys. Rev. B 56, R10024 (1997)] are too large for (In,Ga)N. Being in possession of the (at least approximately) correct structural parameters, we find the theoretical fields to be in very satisfactory agreement with those deduced from experimental data. For a thorough understanding of the spontaneous emission from these structures both electrostatic fields and compositional fluctuations have to be taken into account. Both the transition energies and radiative decay times in photoluminescence are shown to be in agreement with the quantum-confined Stark effect in these structures. Using cathodoluminescence spectroscopy, we investigate the dependence of transition energy and quantum efficiency on both temperature and excitation density. At low temperatures, recombination is governed by localized states, whereas for high temperatures extended states dominate. This finding is in agreement with the temperature dependence of the radiative decay time which is utilized as a probe of the dimensionality of the system. A quantitative analysis of these experiments via coupled rate equations shows that the localization depth in these MBE-grown (In,Ga)N/GaN quantum wells is around 20–30 meV. This shallow localization is found to significantly enhance the internal quantum efficiency up to a temperature of about 100 K." @default.
• W2023472015 created "2016-06-24" @default.
• W2023472015 creator A5001307872 @default.
• W2023472015 creator A5001431880 @default.
• W2023472015 creator A5027932698 @default.
• W2023472015 creator A5038990344 @default.
• W2023472015 creator A5039188426 @default.
• W2023472015 creator A5040650840 @default.
• W2023472015 creator A5067067072 @default.
• W2023472015 creator A5073683768 @default.
• W2023472015 creator A5090817190 @default.
• W2023472015 date "2002-01-01" @default.
• W2023472015 modified "2023-10-16" @default.
• W2023472015 title "Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy" @default.
• W2023472015 cites W1575377844 @default.
• W2023472015 cites W185047083 @default.
• W2023472015 cites W1971338362 @default.
• W2023472015 cites W1975745402 @default.
• W2023472015 cites W1981523584 @default.
• W2023472015 cites W1983375651 @default.
• W2023472015 cites W1985079488 @default.
• W2023472015 cites W1985201312 @default.
• W2023472015 cites W1985476609 @default.
• W2023472015 cites W2017951335 @default.
• W2023472015 cites W2025871128 @default.
• W2023472015 cites W2030138482 @default.
• W2023472015 cites W2035005353 @default.
• W2023472015 cites W2036700137 @default.
• W2023472015 cites W2037315814 @default.
• W2023472015 cites W2049553781 @default.
• W2023472015 cites W2053897976 @default.
• W2023472015 cites W2057987453 @default.
• W2023472015 cites W2058690433 @default.
• W2023472015 cites W2066316750 @default.
• W2023472015 cites W2070310984 @default.
• W2023472015 cites W2072032137 @default.
• W2023472015 cites W2072379487 @default.
• W2023472015 cites W2072418545 @default.
• W2023472015 cites W2073870456 @default.
• W2023472015 cites W2079000183 @default.
• W2023472015 cites W2079718598 @default.
• W2023472015 cites W2084268627 @default.
• W2023472015 cites W2089140091 @default.
• W2023472015 cites W2094814477 @default.
• W2023472015 cites W2127628584 @default.
• W2023472015 cites W3099106349 @default.
• W2023472015 doi "https://doi.org/10.1116/1.1491540" @default.
• W2023472015 hasPublicationYear "2002" @default.
• W2023472015 type Work @default.
• W2023472015 sameAs 2023472015 @default.
• W2023472015 citedByCount "12" @default.
• W2023472015 countsByYear W20234720152013 @default.
• W2023472015 countsByYear W20234720152014 @default.
• W2023472015 countsByYear W20234720152016 @default.
• W2023472015 countsByYear W20234720152018 @default.
• W2023472015 crossrefType "journal-article" @default.
• W2023472015 hasAuthorship W2023472015A5001307872 @default.
• W2023472015 hasAuthorship W2023472015A5001431880 @default.
• W2023472015 hasAuthorship W2023472015A5027932698 @default.
• W2023472015 hasAuthorship W2023472015A5038990344 @default.
• W2023472015 hasAuthorship W2023472015A5039188426 @default.
• W2023472015 hasAuthorship W2023472015A5040650840 @default.
• W2023472015 hasAuthorship W2023472015A5067067072 @default.
• W2023472015 hasAuthorship W2023472015A5073683768 @default.
• W2023472015 hasAuthorship W2023472015A5090817190 @default.
• W2023472015 hasConcept C110738630 @default.
• W2023472015 hasConcept C120665830 @default.
• W2023472015 hasConcept C121332964 @default.
• W2023472015 hasConcept C139861200 @default.
• W2023472015 hasConcept C148869448 @default.
• W2023472015 hasConcept C17729963 @default.
• W2023472015 hasConcept C178790620 @default.
• W2023472015 hasConcept C184779094 @default.
• W2023472015 hasConcept C185592680 @default.
• W2023472015 hasConcept C192562407 @default.
• W2023472015 hasConcept C26873012 @default.
• W2023472015 hasConcept C2779227376 @default.
• W2023472015 hasConcept C29169072 @default.
• W2023472015 hasConcept C3792809 @default.
• W2023472015 hasConcept C41999313 @default.
• W2023472015 hasConcept C49040817 @default.
• W2023472015 hasConcept C520434653 @default.
• W2023472015 hasConcept C85080765 @default.
• W2023472015 hasConceptScore W2023472015C110738630 @default.
• W2023472015 hasConceptScore W2023472015C120665830 @default.
• W2023472015 hasConceptScore W2023472015C121332964 @default.
• W2023472015 hasConceptScore W2023472015C139861200 @default.
• W2023472015 hasConceptScore W2023472015C148869448 @default.
• W2023472015 hasConceptScore W2023472015C17729963 @default.
• W2023472015 hasConceptScore W2023472015C178790620 @default.
• W2023472015 hasConceptScore W2023472015C184779094 @default.
• W2023472015 hasConceptScore W2023472015C185592680 @default.
• W2023472015 hasConceptScore W2023472015C192562407 @default.
• W2023472015 hasConceptScore W2023472015C26873012 @default.
• W2023472015 hasConceptScore W2023472015C2779227376 @default.
• W2023472015 hasConceptScore W2023472015C29169072 @default.
• W2023472015 hasConceptScore W2023472015C3792809 @default.
• W2023472015 hasConceptScore W2023472015C41999313 @default.

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