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• W2023474098 abstract "Structural and electrical characteristics of epitaxial germanium (Ge) heterogeneously integrated on silicon (Si) via a composite, large bandgap AlAs/GaAs buffer are investigated. Electrical characteristics of N-type metal-oxide-semiconductor (MOS) capacitors, fabricated from the aforementioned material stack are then presented. Simulated and experimental X-ray rocking curves show distinct Ge, AlAs, and GaAs epilayer peaks. Moreover, secondary ion mass spectrometry, energy dispersive X-ray spectroscopy (EDS) profile, and EDS line profile suggest limited interdiffusion of the underlying buffer into the Ge layer, which is further indicative of the successful growth of device-quality epitaxial Ge layer. The Ge MOS capacitor devices demonstrated low frequency dispersion of 1.80% per decade, low frequency-dependent flat-band voltage, VFB, shift of 153 mV, efficient Fermi level movement, and limited C-V stretch out. Low interface state density (Dit) from 8.55 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>11</sup> to 1.09 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> eV <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> is indicative of a high-quality oxide/Ge heterointerface, an effective electrical passivation of the Ge surface, and a Ge epitaxy with minimal defects. These superior electrical and material characteristics suggest the feasibility of utilizing large bandgap III-V buffers in the heterointegration of high-mobility channel materials on Si for future high-speed complementary metal-oxide semiconductor logic applications." @default.
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• W2023474098 date "2015-07-01" @default.
• W2023474098 modified "2023-10-18" @default.
• W2023474098 title "Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer" @default.
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• W2023474098 doi "https://doi.org/10.1109/jeds.2015.2425959" @default.
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