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- W2023474710 abstract "Temperature dependence of dark current (Id) and photocurrent (Iph) is reported for Si-based amorphous HgCdTe (a-MCT) infrared photoconductive detector at 80-300 K. It is indicated that an uncooled a-MCT infrared detector can be fabricated based on the Si-based a-MCT. To describe the transport process, the Mott and Davis model [Davis and Mott, Philos. Mag. 22, 903 (1970)] is proposed as the conducting model originally developed for amorphous silicon. A possible mechanism of the carrier transports is shown in the a-MCT materials. The transport transition between the localized and extended carriers leads to the maximal Iph/Id above 200 K." @default.
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- W2023474710 date "2011-09-12" @default.
- W2023474710 modified "2023-09-23" @default.
- W2023474710 title "Amorphous HgCdTe infrared photoconductive detector with high detectivity above 200 K" @default.
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- W2023474710 doi "https://doi.org/10.1063/1.3638459" @default.
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