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• W2023486592 abstract "We demonstrate the application of scanning spreading resistance microscopy (SSRM) for characterization of shallow highly-conductive layers formed by boron implantation of lowly doped n-type silicon substrate followed by a post-implantation annealing. The electrically active dopant concentration versus depth was obtained from a cross-section of freshly cleaved samples where the Si-surface could be clearly distinguished by depositing a SiO2-layer before cleavage. To quantify free carrier concentration we calibrated our data against samples with implanted/annealed boron profiles established by secondary ion mass spectrometry (SIMS). A good fit of SSRM and SIMS data is possible for free carrier concentrations lower than 1020 cm−3, but for higher concentrations there is a discrepancy indicating an incomplete activation of the boron." @default.
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• W2023486592 date "2006-12-01" @default.
• W2023486592 modified "2023-10-10" @default.
• W2023486592 title "Scanning spreading resistance microscopy of shallow doping profiles in silicon" @default.
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• W2023486592 doi "https://doi.org/10.1016/j.nimb.2006.10.050" @default.
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