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• W2023493102 abstract "High-performance CMOS-FinFET with dopant-segregated Schottky source/drain (DS-Schottky S/D) technology has been demonstrated. Thanks to the low parasitic resistance in DS-Schottky S/D, high drive current of 960 muA/mum was achieved for nFET with L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</sub> = 15 nm and W <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fin</sub> =15 nm at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>d</sub> = 1.0 V and I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</sub> = 100 nA/mum. Furthermore, the propagation delay time has been successfully improved down to less than 5 ps in the ring oscillator with DS-Schottky S/D CMOS-FinFET with 15 nm gate length" @default.
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• W2023493102 date "2006-12-01" @default.
• W2023493102 modified "2023-09-27" @default.
• W2023493102 title "High-Performance FinFET with Dopant-Segregated Schottky Source/Drain" @default.
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• W2023493102 doi "https://doi.org/10.1109/iedm.2006.346926" @default.
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