Matches in SemOpenAlex for { <https://semopenalex.org/work/W2023496771> ?p ?o ?g. }
Showing items 1 to 71 of
71
with 100 items per page.
- W2023496771 endingPage "63" @default.
- W2023496771 startingPage "53" @default.
- W2023496771 abstract "Experimental study indicates that a significant contribution to the radiation-sensitivity of certain contemporary silicon planar transistors is caused by space-charge modifications in the oxide surface region. Certain silicon planar transistors, which are inherently passivated and protected by a silicon dioxide surface layer, have been found to realize appreciable degradation after exposure to space-type ionizing radiation. The model of radiation surface-effects proposed in the literature claims the radiation-induced ionization of the ambient gas of the transistor to be the major cause of transistor radiation-sensitivity. Contrary to this model, silicon planar transistors irradiated in an ultra-high vacuum environment realize comparable changes in electrical charactw. istics to those silicon planar transistors irradiated in gaseous ambients. Since the degradation occurs at radiation doses as low as 104 rads and is dependent upon the polarity and magnitude of electrical bias, it has been determined to be a surfa. ce effect. In order to study the effects of radiation on the silicon-silicon dioxide interface, a metal-oxide-semiconductor (MOS) structure was used. From the capacitance versus voltage characteristics of irradiated MOS transistors it has been confirmed that a major contribution to the radiation-surface degradation in silicon planar devices is the buildup of positive space charge in the silicon dioxide films covering the silicon-device surfaces. This space charge is mobile and able to drift by motion in electric fields. This positive charge can be accumulated at certain areas of the surface causing the silicon surf ace to have a tendency to go n type." @default.
- W2023496771 created "2016-06-24" @default.
- W2023496771 creator A5062678663 @default.
- W2023496771 date "1965-01-01" @default.
- W2023496771 modified "2023-09-26" @default.
- W2023496771 title "Surface Effects of Space Radiation on Silicon Devices" @default.
- W2023496771 cites W1971386148 @default.
- W2023496771 cites W2056692003 @default.
- W2023496771 cites W2118026537 @default.
- W2023496771 cites W2156124136 @default.
- W2023496771 doi "https://doi.org/10.1109/tns.1965.4323924" @default.
- W2023496771 hasPublicationYear "1965" @default.
- W2023496771 type Work @default.
- W2023496771 sameAs 2023496771 @default.
- W2023496771 citedByCount "24" @default.
- W2023496771 countsByYear W20234967712013 @default.
- W2023496771 countsByYear W20234967712014 @default.
- W2023496771 countsByYear W20234967712015 @default.
- W2023496771 countsByYear W20234967712022 @default.
- W2023496771 countsByYear W20234967712023 @default.
- W2023496771 crossrefType "journal-article" @default.
- W2023496771 hasAuthorship W2023496771A5062678663 @default.
- W2023496771 hasConcept C108225325 @default.
- W2023496771 hasConcept C111337013 @default.
- W2023496771 hasConcept C119599485 @default.
- W2023496771 hasConcept C121332964 @default.
- W2023496771 hasConcept C127413603 @default.
- W2023496771 hasConcept C159985019 @default.
- W2023496771 hasConcept C165801399 @default.
- W2023496771 hasConcept C172385210 @default.
- W2023496771 hasConcept C185544564 @default.
- W2023496771 hasConcept C192562407 @default.
- W2023496771 hasConcept C2779089622 @default.
- W2023496771 hasConcept C49040817 @default.
- W2023496771 hasConcept C544956773 @default.
- W2023496771 hasConcept C98446981 @default.
- W2023496771 hasConceptScore W2023496771C108225325 @default.
- W2023496771 hasConceptScore W2023496771C111337013 @default.
- W2023496771 hasConceptScore W2023496771C119599485 @default.
- W2023496771 hasConceptScore W2023496771C121332964 @default.
- W2023496771 hasConceptScore W2023496771C127413603 @default.
- W2023496771 hasConceptScore W2023496771C159985019 @default.
- W2023496771 hasConceptScore W2023496771C165801399 @default.
- W2023496771 hasConceptScore W2023496771C172385210 @default.
- W2023496771 hasConceptScore W2023496771C185544564 @default.
- W2023496771 hasConceptScore W2023496771C192562407 @default.
- W2023496771 hasConceptScore W2023496771C2779089622 @default.
- W2023496771 hasConceptScore W2023496771C49040817 @default.
- W2023496771 hasConceptScore W2023496771C544956773 @default.
- W2023496771 hasConceptScore W2023496771C98446981 @default.
- W2023496771 hasIssue "6" @default.
- W2023496771 hasLocation W20234967711 @default.
- W2023496771 hasOpenAccess W2023496771 @default.
- W2023496771 hasPrimaryLocation W20234967711 @default.
- W2023496771 hasRelatedWork W2046350360 @default.
- W2023496771 hasRelatedWork W2051300939 @default.
- W2023496771 hasRelatedWork W2156854821 @default.
- W2023496771 hasRelatedWork W2312552982 @default.
- W2023496771 hasRelatedWork W2379874242 @default.
- W2023496771 hasRelatedWork W246050781 @default.
- W2023496771 hasRelatedWork W2902546961 @default.
- W2023496771 hasRelatedWork W3036157976 @default.
- W2023496771 hasRelatedWork W4237856891 @default.
- W2023496771 hasRelatedWork W2469585996 @default.
- W2023496771 hasVolume "12" @default.
- W2023496771 isParatext "false" @default.
- W2023496771 isRetracted "false" @default.
- W2023496771 magId "2023496771" @default.
- W2023496771 workType "article" @default.