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- W2023531854 abstract "Electrical and crystalline properties of seeded-lateral epitaxial Si layers on SiO 2 obtained by cw scanning Ar laser irradiation are evaluated as a function of distance from the seeding area. Field effect electron mobility of 600 cm 2 /V·s, comparable to that of bulk Si, is obtained for almost all grown layers. However, electrical properties near SiO 2 edge are found to be somewhat poor. This is related to the existence of dislocations and residual stress discontinuities at the SiO 2 edge. Useful application of the multi-region in epitaxial layer for 3-dimensional device structures is also proposed." @default.
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- W2023531854 date "1983-01-01" @default.
- W2023531854 modified "2023-10-15" @default.
- W2023531854 title "Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers" @default.
- W2023531854 doi "https://doi.org/10.7567/jjaps.22s1.209" @default.
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