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- W2023544894 abstract "The p-type semiconductor cuprous oxide (Cu 2 O) film has been of considerable interest as a component of solar cells and photodiodes due to its bandgap energy of 2.1 eV and high optical absorption coefficient. We prepared Cu 2 O films on a conductive substrate by electrodeposition at 318 K from an aqueous solution containing copper sulfate and lactic acid. The structural and electrical characterizations of the resulting films were examined by X-ray diffraction, X-ray photoelectron spectroscopy, and X-ray absorption measurements, and the Hall effect measurement, respectively. The resistivity varied from 2.7 × 10 4 to 3.3 X 10 6 Ω cm, while the carrier density was from 10 1 2 to 10 1 4 cm - 3 and the mobility from 0.4 to 1.8 cm 2 V - 1 s - 1 , depending on the preparation conditions, i.e., solution pH and deposition potential. The carrier density was sensitive to the atomic ratio of Cu to O in the films and the mobility to the grain size." @default.
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- W2023544894 date "2005-01-01" @default.
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- W2023544894 title "Structural and Electrical Characterizations of Electrodeposited p-Type Semiconductor Cu[sub 2]O Films" @default.
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- W2023544894 doi "https://doi.org/10.1149/1.1862478" @default.
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