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• W2023553251 abstract "In this paper, the impact of metallic lanthanum (La) deposited by Radio-Frequency PVD on effective work function (WF eff ) of HfON-based NFET devices in a sacrificial metal gate-first approach is evaluated for the first time. Engineering of WF eff towards N+ without leakage degradation is demonstrated by tuning both the pedestal TiN thickness and the as-deposited metallic La dose. WF eff shift is related to a La-induced interfacial dipole (5), whose value has been correlated to the effective La dose into HfON/SiON stack after diffusion annealing, which has been accurately measured through a spectroscopic method based on La X-Ray Fluorescence (XRF)." @default.
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• W2023553251 date "2015-09-01" @default.
• W2023553251 modified "2023-10-17" @default.
• W2023553251 title "Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices" @default.
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• W2023553251 doi "https://doi.org/10.1109/essderc.2015.7324760" @default.
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