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• W2023554389 abstract "Self-diffusion in silicon is investigated under extrinsic carrier conditions by monitoring the diffusion of 30Si in isotopically enriched silicon layers with boron and phosphorus background doping. At 1000 °C, we find that the Si self-diffusion coefficient is slightly enhanced in both n- and p-type backgrounds. This is direct evidence of the existence of both negatively and positively charged native point defects in Si. We use a simple model involving three charge states to explain the data, which yield the relative contributions of these charge states to the overall self-diffusion coefficient and the locations of the deep levels they introduce in the band gap." @default.
• W2023554389 created "2016-06-24" @default.
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• W2023554389 date "2001-12-24" @default.
• W2023554389 modified "2023-10-03" @default.
• W2023554389 title "Silicon self-diffusion under extrinsic conditions" @default.
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• W2023554389 doi "https://doi.org/10.1063/1.1425953" @default.
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