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- W2023556324 abstract "Room temperature visible photoluminescence (PL) and electroluminescence (EL) of wide band gap hydrogenated amorphous silicon thin films prepared in SiH<SUB>4</SUB> microwave plasma strongly diluted with He is reported. The emission spectra are peaked at approximately 1.5 eV. Films were characterized by means of optical and IR absorption and hydrogen thermal desorption. The band gap of a-Si:H films varies within the interval 2.0-2.2 eV. The strong evidence for two distinct types of PL processes is presented: one being linked with oligosilanes and the second one attributed to electron-hole recombination in tail states. EL has been investigated in p-i-n and p<SUP>+</SUP>-p-n-n<SUP>+</SUP> structures with CrNi/ITO contacts. The EL occurs after initial forming in reverse bias only and its external quantum efficiency is approximately 10<SUP>-5</SUP> percent. The shape and spectral position of EL spectra suggest that the light emission in this case is probably due to simultaneous excitation of the oligosilane units and impact ionization by hot electrons." @default.
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- W2023556324 date "1999-12-29" @default.
- W2023556324 modified "2023-09-27" @default.
- W2023556324 title "Silicon-based materials for optoelectronics: visible photoluminescence and electroluminescence from amorphous silicon" @default.
- W2023556324 doi "https://doi.org/10.1117/12.373675" @default.
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