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- W2023589172 abstract "GaAs complementary metal insulator semiconductor field effect transistors (MISFETs) with a low temperature grown GaAs gate insulator were fabricated using the same epitaxial layer structure. Self-aligned Si and Be implants were used for the source/drain region in n- and p-channel MISFETs, respectively. With a 1.5 µm gate length, the maximum drain current is 40 and 120 mA/mm for a normally-off n- and p-channel MISFET, respectively. It increases to 500 mA/mm for a normally-on n-channel device." @default.
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- W2023589172 date "1996-01-01" @default.
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- W2023589172 title "Self-aligned complementary GaAs MISFETs using a low-temperature-grown GaAs gate insulator" @default.
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- W2023589172 doi "https://doi.org/10.1049/el:19960221" @default.
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