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- W2023590980 abstract "High temperature defect equilibrium (HTDE) in ZnS was analysed to study the conditions of making p-type material. High temperature electrical conductivity (HTEC) under defined component vapour pressure was investigated in undoped ZnS in the temperature range from 600°C to 1140°C. HTEC measurements were carried out using a two-zone resistance furnace and a vacuum sealed quartz ampoule with four sealed tungsten or graphite electrodes. All ZnS HTEC isotherms can be divided into three regions. The high zinc vapour pressure (pZn) and the high sulphur vapour pressure (pS2) regions are characterized by dominant native donors. In the ZnS HTDE model, antistructure disorder is dominating at high pS2 values, similar to CdS and CdTe HTDE models. Changes occur at low pZn or at low pS2 values. The increase of HTEC at low pZn or at low pS2 values is explained by the existence of the p-type area in this region. This p-type area appears in the total range of temperature investigated." @default.
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- W2023590980 date "2001-12-01" @default.
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- W2023590980 title "High temperature electrical conductivity of undoped ZnS" @default.
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- W2023590980 doi "https://doi.org/10.1016/s0921-4526(01)00862-6" @default.
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