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- W2023596953 abstract "This paper deals with growth of GaAs InP and their ternaries quaternaries and heterostructures by the gas-source molecular beam epitaxy (GSMBE) method. Epilayer qualities are discussed and compared with those obtained by other methods. Some problems related to growth of layers and interfaces are discussed in detail. Properties of lasers photodetectors and optical modulators fabricated by GSMBE are presented." @default.
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- W2023596953 date "1991-03-01" @default.
- W2023596953 modified "2023-09-27" @default.
- W2023596953 title "Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials" @default.
- W2023596953 doi "https://doi.org/10.1117/12.24378" @default.
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