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• W2023610439 abstract "The compensation degree of GaAs : Si crystals grown by horizontal Bridgman method was investigated as a function of As pressure during the growth. Three different methods (local vibrational mode (LVM) absorption, infrared absorption, Hall-effect and conductivity) were used for the determination of the compensation degree, K. These methods yield the same result of a minimum of K at a small excess of the Ga mole fraction in the melt. Possible compensation mechanisms are discussed to explain this minimum." @default.
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• W2023610439 date "1994-03-01" @default.
• W2023610439 modified "2023-09-23" @default.
• W2023610439 title "Compensation in GaAs : Si in correlation to As pressure during the crystal growth" @default.
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• W2023610439 doi "https://doi.org/10.1016/0038-1098(94)90078-7" @default.
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