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- W2023625901 abstract "Abstract Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B 2 H 6 ) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by HWCVD at low substrate temperature of 200 °C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B 2 H 6 doping ratio, crystalline volume fraction, optical band gap and dark conductivity." @default.
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- W2023625901 date "2008-12-01" @default.
- W2023625901 modified "2023-09-27" @default.
- W2023625901 title "Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition" @default.
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- W2023625901 doi "https://doi.org/10.1016/j.apsusc.2008.08.038" @default.
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