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- W2023678146 abstract "The low-frequency noise characteristics in strained-Si nMOSFETs, utilizing the chemical–mechanical-polishing (CMP) treated SiGe virtual substrate have been investigated and compared with the results obtained on strained-Si counterparts without CMP technology. Additional 10.6% mobility improvement and four times lower 1/f noise over 1–100 Hz was obtained for strained-Si devices with the CMP process, indicting that the CMP process provides a smoother surface for the strained-Si/SiGe structure. Moreover, experimental results show that carrier number fluctuation, and not the unified model, is more suitable to interpret the mechanism of 1/f noise in strained-Si devices with the CMP process." @default.
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- W2023678146 date "2008-09-22" @default.
- W2023678146 modified "2023-10-18" @default.
- W2023678146 title "Low-frequency noise of strained-Si nMOSFETs fabricated on a chemical–mechanical-polished SiGe virtual substrate" @default.
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