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• W2023681128 endingPage "2902" @default.
• W2023681128 startingPage "2899" @default.
• W2023681128 abstract "Approximately 2-μm-thick Si-doped a-plane GaN films with different doping concentrations were grown on approximately 8-μm-thick undoped a-plane GaN/r-sapphire by metal organic vapor phase epitaxy (MOVPE). The structural and electrical properties of the Si-doped a-plane GaN films were investigated by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and temperature-dependent Hall measurement. The results showed that a small amount of Si doping can improve the surface morphology and decrease the density of pits. Upon increasing the CH3SiH3 flow rate, the crystalline quality of the (0 0 0 2) plane was slightly improved. The highest room-temperature mobility of 83.4 cm2/Vs was obtained at a carrier density of 6.2×1018 with a CH3SiH3 flow rate of 10 sccm." @default.
• W2023681128 created "2016-06-24" @default.
• W2023681128 creator A5010272406 @default.
• W2023681128 creator A5016499715 @default.
• W2023681128 creator A5039512518 @default.
• W2023681128 creator A5060933012 @default.
• W2023681128 creator A5065710214 @default.
• W2023681128 creator A5071933515 @default.
• W2023681128 date "2009-05-01" @default.
• W2023681128 modified "2023-10-18" @default.
• W2023681128 title "Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE" @default.
• W2023681128 cites W1575377844 @default.
• W2023681128 cites W1965710986 @default.
• W2023681128 cites W1977426837 @default.
• W2023681128 cites W1979083611 @default.
• W2023681128 cites W1995983456 @default.
• W2023681128 cites W2023507575 @default.
• W2023681128 cites W2036915169 @default.
• W2023681128 cites W2038498157 @default.
• W2023681128 cites W2066564512 @default.
• W2023681128 cites W2069466226 @default.
• W2023681128 cites W2085102997 @default.
• W2023681128 cites W2107227184 @default.
• W2023681128 cites W2140581942 @default.
• W2023681128 doi "https://doi.org/10.1016/j.jcrysgro.2009.01.040" @default.
• W2023681128 hasPublicationYear "2009" @default.
• W2023681128 type Work @default.
• W2023681128 sameAs 2023681128 @default.
• W2023681128 citedByCount "18" @default.
• W2023681128 countsByYear W20236811282012 @default.
• W2023681128 countsByYear W20236811282013 @default.
• W2023681128 countsByYear W20236811282014 @default.
• W2023681128 countsByYear W20236811282016 @default.
• W2023681128 countsByYear W20236811282017 @default.
• W2023681128 countsByYear W20236811282018 @default.
• W2023681128 countsByYear W20236811282020 @default.
• W2023681128 crossrefType "journal-article" @default.
• W2023681128 hasAuthorship W2023681128A5010272406 @default.
• W2023681128 hasAuthorship W2023681128A5016499715 @default.
• W2023681128 hasAuthorship W2023681128A5039512518 @default.
• W2023681128 hasAuthorship W2023681128A5060933012 @default.
• W2023681128 hasAuthorship W2023681128A5065710214 @default.
• W2023681128 hasAuthorship W2023681128A5071933515 @default.
• W2023681128 hasConcept C106782819 @default.
• W2023681128 hasConcept C110738630 @default.
• W2023681128 hasConcept C113196181 @default.
• W2023681128 hasConcept C119599485 @default.
• W2023681128 hasConcept C120665830 @default.
• W2023681128 hasConcept C121332964 @default.
• W2023681128 hasConcept C127413603 @default.
• W2023681128 hasConcept C134112204 @default.
• W2023681128 hasConcept C171250308 @default.
• W2023681128 hasConcept C175665537 @default.
• W2023681128 hasConcept C185592680 @default.
• W2023681128 hasConcept C192562407 @default.
• W2023681128 hasConcept C207114421 @default.
• W2023681128 hasConcept C2779227376 @default.
• W2023681128 hasConcept C2780064504 @default.
• W2023681128 hasConcept C43617362 @default.
• W2023681128 hasConcept C49040817 @default.
• W2023681128 hasConcept C520434653 @default.
• W2023681128 hasConcept C57410435 @default.
• W2023681128 hasConcept C57863236 @default.
• W2023681128 hasConcept C69990965 @default.
• W2023681128 hasConceptScore W2023681128C106782819 @default.
• W2023681128 hasConceptScore W2023681128C110738630 @default.
• W2023681128 hasConceptScore W2023681128C113196181 @default.
• W2023681128 hasConceptScore W2023681128C119599485 @default.
• W2023681128 hasConceptScore W2023681128C120665830 @default.
• W2023681128 hasConceptScore W2023681128C121332964 @default.
• W2023681128 hasConceptScore W2023681128C127413603 @default.
• W2023681128 hasConceptScore W2023681128C134112204 @default.
• W2023681128 hasConceptScore W2023681128C171250308 @default.
• W2023681128 hasConceptScore W2023681128C175665537 @default.
• W2023681128 hasConceptScore W2023681128C185592680 @default.
• W2023681128 hasConceptScore W2023681128C192562407 @default.
• W2023681128 hasConceptScore W2023681128C207114421 @default.
• W2023681128 hasConceptScore W2023681128C2779227376 @default.
• W2023681128 hasConceptScore W2023681128C2780064504 @default.
• W2023681128 hasConceptScore W2023681128C43617362 @default.
• W2023681128 hasConceptScore W2023681128C49040817 @default.
• W2023681128 hasConceptScore W2023681128C520434653 @default.
• W2023681128 hasConceptScore W2023681128C57410435 @default.
• W2023681128 hasConceptScore W2023681128C57863236 @default.
• W2023681128 hasConceptScore W2023681128C69990965 @default.
• W2023681128 hasIssue "10" @default.
• W2023681128 hasLocation W20236811281 @default.
• W2023681128 hasOpenAccess W2023681128 @default.
• W2023681128 hasPrimaryLocation W20236811281 @default.
• W2023681128 hasRelatedWork W1774387198 @default.
• W2023681128 hasRelatedWork W1967009405 @default.
• W2023681128 hasRelatedWork W1986442514 @default.
• W2023681128 hasRelatedWork W2051431011 @default.
• W2023681128 hasRelatedWork W2060632816 @default.
• W2023681128 hasRelatedWork W2091883990 @default.
• W2023681128 hasRelatedWork W2110612147 @default.
• W2023681128 hasRelatedWork W2132326141 @default.
• W2023681128 hasRelatedWork W2361167155 @default.

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