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• W2023682065 abstract "Nitrogen and erbium co-doped of ZnO nanowires (NWs) are fabricated by ion implantation and subsequent annealing in air. The incorporation of Er3+ and N+ ions is verified by energy dispersive X-ray spectroscopy (EDS) and Raman spectra. The samples exhibit upconversion photoluminescence around ∼550 nm and ∼660 nm under an excitation at 980 nm. It is discovered that the N-doped can drastically increase the upconversion photoluminescence intensity by modifying the local structure around Er3+ in ZnO matrix. The enhancement of the PL intensity by the N-doped is caused by the formation of ErO6−xNx octahedron complexes. With the increase of the annealing temperature (Ta), the Er3+ ions diffuse towards the surface of the NWs, which benefits the red emission and evokes the variation of intensity ratio owing to the existence of some organic groups." @default.
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• W2023682065 date "2011-02-01" @default.
• W2023682065 modified "2023-09-27" @default.
• W2023682065 title "Upconversion luminescence from Er-N codoped of ZnO nanowires prepared by ion implantation method" @default.
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• W2023682065 doi "https://doi.org/10.1016/j.apsusc.2010.11.055" @default.
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