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• W2023682871 endingPage "197" @default.
• W2023682871 startingPage "189" @default.
• W2023682871 abstract "We systematically studied the effect of thermal annealing on the optical and electrical properties of amorphous semiconducting thin films in the system Ge20Te80−xBix (x = 0, 0.19, 2.93, 7.35) prepared by flash evaporation in a vacuum of 1 × 10−6 Torr. The films are characterized by x-ray diffraction (XRD) and electron probe micro analysis. The annealing temperature is kept at 150 °C, 180 °C and 220 °C. No crystallization of the thin films is achieved on annealing up to the temperature of 150 °C. At a higher temperature of annealing, microcrystals of Te, Bi2Te3, Ge–Te, etc, are observed along with an amorphous phase as indicated by XRD analysis. The fundamental optical absorption edge and reflection spectra of as-prepared and annealed films are determined. Optical interband transitions are observed for various films (as-prepared and annealed). The presence of crystalline Bi2Te3 in films annealed at 220 °C is also supported by the reflection spectrum. The optical energy gap (Eg), the slope parameter (Δ) of the absorption edge and the tailing parameter (B−1) of the energy band tails are computed from the optical data. The dc electrical conductivity (σdc) of various films is studied in the temperature range of 150–450 K. We observe that two types of conduction take place: conduction through extended states in the higher temperature region, and conduction through localized states in the band tails and at the Fermi level by the hopping process assisted by phonons at lower temperatures. The data at higher temperatures have been fitted with the expression σdc = σ0exp(−ΔE/kT) and the electrical parameters, ΔE and σ0, are also determined. It is observed that the bismuth concentration and annealing temperature dependences of the optical and electrical parameters are different in the two regions of compositions, x ≤ 2.93 and x > 2.93, indicating structural differences in the two sets of compositions. It is pointed out that the bulk form of these amorphous semiconductors exhibits a carrier sign reversal at a bismuth concentration of about 3.5 at%. However, the thin-film form of these amorphous semiconductors does not show such a carrier sign reversal in the electrical transport." @default.
• W2023682871 created "2016-06-24" @default.
• W2023682871 creator A5000197470 @default.
• W2023682871 creator A5011801403 @default.
• W2023682871 creator A5039928630 @default.
• W2023682871 creator A5041252796 @default.
• W2023682871 creator A5056632302 @default.
• W2023682871 creator A5065907126 @default.
• W2023682871 creator A5077747045 @default.
• W2023682871 date "2002-02-18" @default.
• W2023682871 modified "2023-09-22" @default.
• W2023682871 title "Study of the effect of thermal annealing on the optical and electrical properties of vacuum evaporated amorphous thin films in the system Ge20Te80-xBix" @default.
• W2023682871 cites W1964605330 @default.
• W2023682871 cites W2034264829 @default.
• W2023682871 cites W2040783897 @default.
• W2023682871 cites W2069977949 @default.
• W2023682871 cites W2070986863 @default.
• W2023682871 cites W2086535085 @default.
• W2023682871 cites W2116449642 @default.
• W2023682871 cites W2141399311 @default.
• W2023682871 cites W2158234611 @default.
• W2023682871 cites W2985516101 @default.
• W2023682871 cites W4211254207 @default.
• W2023682871 doi "https://doi.org/10.1088/0268-1242/17/3/302" @default.
• W2023682871 hasPublicationYear "2002" @default.
• W2023682871 type Work @default.
• W2023682871 sameAs 2023682871 @default.
• W2023682871 citedByCount "16" @default.
• W2023682871 countsByYear W20236828712013 @default.
• W2023682871 countsByYear W20236828712016 @default.
• W2023682871 countsByYear W20236828712020 @default.
• W2023682871 countsByYear W20236828712023 @default.
• W2023682871 crossrefType "journal-article" @default.
• W2023682871 hasAuthorship W2023682871A5000197470 @default.
• W2023682871 hasAuthorship W2023682871A5011801403 @default.
• W2023682871 hasAuthorship W2023682871A5039928630 @default.
• W2023682871 hasAuthorship W2023682871A5041252796 @default.
• W2023682871 hasAuthorship W2023682871A5056632302 @default.
• W2023682871 hasAuthorship W2023682871A5065907126 @default.
• W2023682871 hasAuthorship W2023682871A5077747045 @default.
• W2023682871 hasConcept C113196181 @default.
• W2023682871 hasConcept C119599485 @default.
• W2023682871 hasConcept C119824511 @default.
• W2023682871 hasConcept C120665830 @default.
• W2023682871 hasConcept C121332964 @default.
• W2023682871 hasConcept C127413603 @default.
• W2023682871 hasConcept C159985019 @default.
• W2023682871 hasConcept C171250308 @default.
• W2023682871 hasConcept C172100665 @default.
• W2023682871 hasConcept C178790620 @default.
• W2023682871 hasConcept C181966813 @default.
• W2023682871 hasConcept C185592680 @default.
• W2023682871 hasConcept C19067145 @default.
• W2023682871 hasConcept C192562407 @default.
• W2023682871 hasConcept C203036418 @default.
• W2023682871 hasConcept C26873012 @default.
• W2023682871 hasConcept C2777855556 @default.
• W2023682871 hasConcept C2779192298 @default.
• W2023682871 hasConcept C39353612 @default.
• W2023682871 hasConcept C43617362 @default.
• W2023682871 hasConcept C49040817 @default.
• W2023682871 hasConcept C50792271 @default.
• W2023682871 hasConcept C56052488 @default.
• W2023682871 hasConcept C69990965 @default.
• W2023682871 hasConcept C8010536 @default.
• W2023682871 hasConcept C97355855 @default.
• W2023682871 hasConceptScore W2023682871C113196181 @default.
• W2023682871 hasConceptScore W2023682871C119599485 @default.
• W2023682871 hasConceptScore W2023682871C119824511 @default.
• W2023682871 hasConceptScore W2023682871C120665830 @default.
• W2023682871 hasConceptScore W2023682871C121332964 @default.
• W2023682871 hasConceptScore W2023682871C127413603 @default.
• W2023682871 hasConceptScore W2023682871C159985019 @default.
• W2023682871 hasConceptScore W2023682871C171250308 @default.
• W2023682871 hasConceptScore W2023682871C172100665 @default.
• W2023682871 hasConceptScore W2023682871C178790620 @default.
• W2023682871 hasConceptScore W2023682871C181966813 @default.
• W2023682871 hasConceptScore W2023682871C185592680 @default.
• W2023682871 hasConceptScore W2023682871C19067145 @default.
• W2023682871 hasConceptScore W2023682871C192562407 @default.
• W2023682871 hasConceptScore W2023682871C203036418 @default.
• W2023682871 hasConceptScore W2023682871C26873012 @default.
• W2023682871 hasConceptScore W2023682871C2777855556 @default.
• W2023682871 hasConceptScore W2023682871C2779192298 @default.
• W2023682871 hasConceptScore W2023682871C39353612 @default.
• W2023682871 hasConceptScore W2023682871C43617362 @default.
• W2023682871 hasConceptScore W2023682871C49040817 @default.
• W2023682871 hasConceptScore W2023682871C50792271 @default.
• W2023682871 hasConceptScore W2023682871C56052488 @default.
• W2023682871 hasConceptScore W2023682871C69990965 @default.
• W2023682871 hasConceptScore W2023682871C8010536 @default.
• W2023682871 hasConceptScore W2023682871C97355855 @default.
• W2023682871 hasIssue "3" @default.
• W2023682871 hasLocation W20236828711 @default.
• W2023682871 hasOpenAccess W2023682871 @default.
• W2023682871 hasPrimaryLocation W20236828711 @default.
• W2023682871 hasRelatedWork W14126977 @default.
• W2023682871 hasRelatedWork W1964699340 @default.

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