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- W2023691872 abstract "We describe a new selective MOVPE regrowth technique combined with an in-situ vapor phase mesa-etching process and its application for the fabrication of transverse-junction buried hetero-structures. This new technique is very useful in obtaining a clean regrowth interface even if the regrowth is on AlGaAs. We have demonstrated an optoelectronic AlGaAs/GaAs hetero-transverse-junction semiconductor device fabricated by this regrowth process. The device operates as not only a laser with a threshold current of 19 mA at room temperature but also as a junction field effect transistor with a transconductance of 120 mS/mm (6.0 μm wide active region and 200 μm long cavity)." @default.
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- W2023691872 date "1991-01-01" @default.
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- W2023691872 title "A new selective MOVPE regrowth process utilizing in-situ vapor phase etching for optoelectronic integrated circuits" @default.
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- W2023691872 doi "https://doi.org/10.1016/0022-0248(91)90555-j" @default.
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